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2SD1420
Silicon NPN Epitaxial
ADE-208-1151 (Z) 1st. Edition Mar. 2001 Application
Low frequency power amplifier
Outline
UPAK
1 3 2
4
1. Base 2. Collector 3. Emitter 4. Collector (Flange)
2SD1420
Absolute Maximum Ratings (Ta = 25C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak)* PC * Tj Tstg
2 1
Ratings 180 120 5 1.5 3 1 150 -55 to +150
Unit V V V A A W C C
Notes: 1. PW 10 ms, Duty cycle 20% 2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm)
Electrical Characteristics (Ta = 25C)
Item Collector to base breakdown voltage Symbol V(BR)CBO Min 180 120 5 --
1
Typ -- -- -- -- -- -- -- --
Max -- -- -- 10 320 -- 1.0 0.9
Unit V V V A
Test conditions I C = 1 mA, IE = 0 I C = 10 mA, RBE = I E = 1 mA, IC = 0 VCB = 160 V, IE = 0 VCE = 5 V, IC = 0.15 A VCE = 5 V, IC = 0.5 A
Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio V(BR)EBO I CBO hFE1* hFE2 Collector to emitter saturation voltage Base to emitter voltage Note: Mark hFE1 EA 60 to 120 VCE(sat) VBE EB 100 to 200
60 30 -- -- EC
V V
I C = 0.5 A, IB = 50 mA, Pulse VCE = 5 V, IC = 0.15 A, Pulse
1. The 2SD1420 is grouped by h FE1 as follows. 160 to 320
2SD1420
Maximum Collector Dissipation Curve 1.2 Collector Power Dissipation Pc (W) (on the alumina ceramic board) Collector Current IC (A) Typical Output Characteristics 1.0
5. 0
0.8
4.0 5 3. 3.0
2.5 2.0
Pulse
0.8
0.6
1.5
0.4
1.0
0.4
0.2
0.5 mA IB = 0
0
50 100 150 Ambient Temperature Ta (C)
0
10 20 30 40 50 Collector to Emitter Voltage VCE (V)
Typical Transfer Characteristics 500 Collector Current IC (mA) 200 100 50 VCE = 5 V Pulse 300 DC Current Transfer Ratio hFE 250 200 150 100 50 0 0 0.2 0.4 0.6 0.8 1.0 Base to Emitter Voltage VBE (V) 1
DC Current Transfer Ratio vs. Collector Current Pusle VCE = 5 V
10 5 2 1
25 -25
20
Ta = 75C
3
10 30 100 300 1,000 3,000 Collector Current IC (mA)
2SD1420
Collector to Emitter Saturation Voltage vs. Collector Current 1.2 IC = 10 IB Pulse 1.0 0.8 0.6 0.4 0.2 0 1 3 10 30 100 300 1,000 Collector Current IC (mA) Gain Bandwidth Product vs. Collector Current 240 Gain Bandwidth Product fT (MHz) VCE = 5 V 200 160 120 80 40 0 10
Collector to Emitter Saturation Voltage VCE (sat) (V)
30 100 300 Collector Current IC (mA)
1,000
Collector Output Capacitance vs. Collector to Base Voltage Collector Output Capacitance Cob (pF) 200 100 50 f = 1 MHz IE = 0
20 10 5
2 1 2 5 10 20 50 100 Collector to Base Voltage VCB (V)
2SD1420
Package Dimensions As of January, 2001
Unit: mm
4.5 0.1
0.4
1.8 Max 1
1.5 0.1 0.44 Max (2.5)
(1.5)
1.5 1.5 3.0
0.8 Min
0.44 Max
Hitachi Code JEDEC EIAJ Mass (reference value)
(0.4)
0.53 Max 0.48 Max
2.5 0.1 4.25 Max
UPAK -- Conforms 0.050 g
(0.2)
2SD1420
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products.
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For further information write to:
Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160
Copyright (c) Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0

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